 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 BFN16 C COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD E C B SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 250 250 5 500 200 100 1 -65 to +150 UNIT V V V mA mA mA W C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 40 Typ.70 Typ.1.5 MHz pF MIN. 250 250 5 100 20 100 0.4 0.9 MAX. UNIT V V V nA A nA V V CONDITIONS. I C=100A I C=1mA I E=100A V CB=250V V CB=250V, T amb=150 C V EB=3V I C=20mA, I B=2mA I C =20mA, I B=2mA I C=1mA,V CE=10V* I C=10mA, V CE=10V I C=30mA, V CE=10V I C=20mA, V CE=10V* f=20MHz V CB=30V,f=1MHz fT C obo * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMTA42 datasheet 3 - 42 |
Price & Availability of BFN16
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |